NTBG023N065M3S

onsemi
863-NTBG023N065M3S
NTBG023N065M3S

Mfr.:

Description:
SiC MOSFETs SIC MOS D2PAK-7L 23MOHM 650V M3S

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about onsemi NTBG023N065M3S

In Stock: 680

Stock:
680 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€9.83 €9.83
€6.82 €68.20
€5.77 €577.00
Full Reel (Order in multiples of 800)
€5.39 €4,312.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
D2PAK-7
N-Channel
1 Channel
650 V
40 A
33 mOhms
- 8 V, + 22 V
4 V
69 nC
- 55 C
+ 175 C
263 W
Enhancement
EliteSiC
Brand: onsemi
Configuration: Single
Fall Time: 9.6 ns
Packaging: Reel
Packaging: Cut Tape
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 15 ns
Series: NTBG023N065M3S
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 11 ns
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Attributes selected: 0

Datasheet

TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

NTBG023N065M3S 23mΩ EliteSiC MOSFET

onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFET offers an M3S planar technology for fast-switching applications in a D2PAK-7L package. This MOSFET features 650V drain-to-source voltage, 40A continuous drain current, 263W power dissipation, and 216A pulsed drain current. The NTBG023N065M3S MOSFET integrates an ultra-low gate charge and high-speed switching MOSFET with low capacitance (Coss = 153pF). This MOSFET operates at -55°C to 175°C temperature range and is 100% avalanche-tested. The NTBG023N065M3S MOSFET is Halide-free and RoHS compliant with a 7a exemption. Typical applications include Switching Mode Power Supplies (SMPS), solar inverters, UPS, energy storage, and EV charging infrastructure.

NTBG025N065SC1 19mohm Silicon Carbide MOSFET

onsemi NTBG025N065SC1 19mohm Silicon Carbide MOSFET is housed in a D2PAK-7L package and designed to be fast and rugged. The onsemi NTBG025N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.

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