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FGHL60T120RWD

Name: onsemi FGHL60T120RWD
Brand: onsemi
SKU: 863-FGHL60T120RWD
Price: 8.75 EUR
Availability: InStock

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Mouser No:

863-FGHL60T120RWD

Mfr. No:

FGHL60T120RWD

Mfr.:

onsemi

Description:

IGBTs 1200V, 60A Trench Field Stop VII (FS7) Discrete IGBT

Datasheet:

FGHL60T120RWD Datasheet

ECAD Model:

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In Stock: 367

Stock:: 367 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€8.75	€8.75
	€5.19	€51.90
	€4.64	€464.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	120 A
Pd - Power Dissipation:	833 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FGHL60T120RWD
Packaging:	Tube
Brand:	onsemi
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	450
Subcategory:	IGBTs

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Datasheet

FGHL60T120RWD Datasheet

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

FGHL60T120RWD 1200V 60A Discrete IGBT

onsemi FGHL60T120RWD 1200V 60A Discrete IGBT uses advanced 7th-generation IGBT technology and is housed in a TO247 3-lead package. The onsemi FGHL60T120RWD delivers high performance, low conduction losses, and excellent switching control. The device is ideal for efficient operation in applications like motor control, UPS, data centers, and high-power switches.

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