DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

Results: 113
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Toshiba MOSFETs N-Ch 800V 1150pF 19nC 9.5A 40W 132In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 9.5 A 460 mOhms - 20 V, 20 V 3 V 19 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC 31In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 100 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 9.7A 80W FET 600V 700pF 20nC 326In Stock
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-247 PD=190W F=1MHZ 40In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 24 A 110 mOhms - 10 V, 10 V 3 V 40 nC - 55 C + 150 C 190 W Enhancement Tube
Toshiba MOSFETs MOSFET NChannel 0.33ohm DTMOS 190In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11.1 A 330 mOhms - 30 V, 30 V 3.5 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch MOS 12A 500V 45W 1350pF 0.52 138In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 12 A 520 mOhms - 30 V, 30 V 2 V 25 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC 79In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11.5 A 300 mOhms - 30 V, 30 V 2.7 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 11.5A 110W FET 600V 890pF 25nC 76In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11.5 A 300 mOhms - 30 V, 30 V 3.7 V 25 nC - 55 C + 150 C 110 W Enhancement DTMOSIV Tube

Toshiba MOSFETs Power MOSFET N-Channel 68In Stock
2,000Expected 21/08/2026
Min.: 1
Mult.: 1
: 1,000

Si Through Hole D2PAK-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel

Toshiba MOSFETs MOSFET NChannel 0.22ohm DTMOS 99In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 3.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC 114In Stock
Min.: 1
Mult.: 1

Si N-Channel 1 Channel DTMOSIV Tube
Toshiba MOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC 67In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 30 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-3PN(OS) PD=130W 1MHz PWR MOSFET TRNS 73In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 4.5 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-3PN PD=130W 1MHz PWR MOSFET TRNS 74In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tray

Toshiba MOSFETs DTMOSIV 600V 190mOhm 15.8A 130W 1350pF 17In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS 6In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.3 A 200 mOhms - 30 V, 30 V 3.5 V 45 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 800V 2050pF 32nC 17A 45W 154In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 250 mOhms - 20 V, 20 V 3 V 32 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ 145In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 18.5 A 190 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFETs MOSFET NChtrr100ns 0.25ohm DTMOS 84In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 20 A 150 mOhms - 30 V, 30 V 4.5 V 55 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-220 PD=165W 1MHz PWR MOSFET TRNS 80In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 175 mOhms - 30 V, 30 V 4.5 V 55 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A 58In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 130 mOhms - 30 V, 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-3PN PD=165W 1MHz PWR MOSFET TRNS 100In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 20 A 155 mOhms - 30 V, 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tray

Toshiba MOSFETs Power MOSFET N-Channel 98In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 150 mOhms - 30 V, 30 V 3 V 55 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube

Toshiba MOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A 3In Stock
90Expected 11/08/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 130 mOhms - 30 V, 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel 31In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 27.6 A 94 mOhms - 30 V, 30 V 2.5 V 75 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube