It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

MAX22701EASA+

Name: Analog Devices Inc. MAX22701EASA+
Brand: Analog Devices / Maxim Integrated
SKU: 700-MAX22701EASA+
Price: 4.95 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

700-MAX22701EASA+

Mfr. No:

MAX22701EASA+

Mfr.:

Analog Devices / Maxim Integrated

Description:

Gate Drivers Ultra-High CMTI Silicon-Carbide (SiC) ga

Datasheet:

MAX22701EASA+ Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Analog Devices / Maxim Integrated MAX22701EASA+

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Analog Devices Inc.
Product Category:	Gate Drivers
RoHS:
Product:	Isolated Gate Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	100 mA
Supply Voltage - Min:	3 V
Supply Voltage - Max:	28 V
Configuration:	Inverting, Non-Inverting
Rise Time:	3.6 ns
Fall Time:	2.5 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Tube
Brand:	Analog Devices / Maxim Integrated
Development Kit:	MAX22701EVKIT
Logic Type:	CMOS
Moisture Sensitive:	Yes
Operating Supply Current:	5 mA, 6 mA
Output Voltage:	19.95 V
Pd - Power Dissipation:	750.89 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	36 ns
Rds On - Drain-Source Resistance:	2.5 Ohms
Shutdown:	Shutdown
Factory Pack Quantity:	100
Subcategory:	PMIC - Power Management ICs
Technology:	SiC
Unit Weight:	2.455 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

                        
MOUSER WILL NO LONGER BE CARRYING THIS ITEM IN THE FUTURE.

Filter Document:

Datasheet

MAX22701EASA+ Datasheet

RoHS Certificate (PDF)

Compliance Codes

CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390070
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Power Management ICs

Analog Devices Inc. Power Management ICs (PMICs) power innovation with precision and efficiency. With unmatched power densities, ultra-low noise technology, and superior reliability, Analog Devices’ PMIC portfolio supports complex power architectures in the most demanding applications, including industrial, automotive, and aerospace. Electronics engineers and designers are supported with power management evaluation boards and design tools, such as LTspice^®, to ease development and optimize performance. From Silent Switcher^® regulators and µModule^® power solutions to advanced battery management, LDOs, and digital power control, ADI delivers high-efficiency, low-noise, and compact solutions that ensure reliability and scalability.

MAX2270x Ultra-High CMTI Isolated Gate Drivers

Analog Devices Inc. MAX2270x Ultra-High CMTI Isolated Gate Drivers are single-channel isolated gate drivers with ultra-high common-mode transient immunity (CMTI) of 300kV/μs (typ). The devices are designed to drive silicon-carbide (SiC) or gallium-nitride (GaN) transistors in various inverter or motor control applications. All devices have integrated digital galvanic isolation using ADI’s proprietary process technology. The devices feature variants with output options for gate driver common pin GNDB (MAX22700), Miller clamp (MAX22701), or adjustable under-voltage-lockout UVLO (MAX22702). Also, variants are offered as Differential (D versions) or Single-Ended (E versions) inputs. These devices transfer digital signals between circuits with different power domains. All of the devices feature isolation for a withstand voltage rating of 3kV_RMS for 60 seconds.