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STP80N1K1K6

Name: STMicroelectronics STP80N1K1K6
Brand: STMicroelectronics
SKU: 511-STP80N1K1K6
Price: 2.05 EUR
Availability: InStock

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Mouser No:

511-STP80N1K1K6

Mfr. No:

STP80N1K1K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET

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Datasheet:

STP80N1K1K6 Datasheet (PDF)

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In Stock: 1,062

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€2.05	€2.05
	€1.32	€13.20
	€0.903	€90.30
	€0.719	€359.50
	€0.674	€674.00
	€0.612	€1,224.00
	€0.598	€2,990.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	MOSFETs
Factory Pack Quantity:	1000
Subcategory:	Transistors
Unit Weight:	2 g

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Datasheet

STP80N1K1K6 Datasheet (PDF)

PCN

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

STP80N1K1K6 N-Channel Power MOSFET

STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology. The STMicroelectronics STP80N1K1K6 MOSFET offers top-notch on-resistance per area and gate charge. The device is ideal for high-power density and efficient applications.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.