M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

Results: 27
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename

onsemi SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V 2,549In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 40MOHM 1200V 1,511In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 40MOHM 1200V 1,014In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC

onsemi SiC MOSFETs 20MW 1200V 996In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement AEC-Q101 EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V 2,060In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART 2,176In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 80MOHM 1200V 686In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-3L 80MOHM 1200V 1,326In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 178 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 20MOHM 1200V 257In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS 80MW 1200 V 80 mOhms 44A 1,182In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 178 W Enhancement AEC-Q101 EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 80MOHM 1200V 1,973In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement AEC-Q101 EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 1200V 160MOHM AUTO PART 181In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-3L 40MOHM 1200V 221In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 80MOHM 1200V 689In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 29 A 80 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 20MOHM 1 234In Stock
Min.: 1
Mult.: 1
Reel: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement AEC-Q101 EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 20MOHM 1200V 282In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 1200V 40MOHM AUTO PART 224In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L 155In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.7 kV 71 A 40 mOhms - 15 V, + 25 V 4.3 V 222 nC - 55 C + 175 C 428 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L 118In Stock
450Expected 20/02/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 81 A 40 mOhms - 15 V, + 25 V 4.3 V 200 nC - 55 C + 175 C 535 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS 20MW 1200V 1,471In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement EliteSiC

onsemi SiC MOSFETs 20MW 1200V 603In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V 981In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 80MOHM 1200V 253In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 29 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-3L 40MOHM 1200V 635In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V 990In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC