1200V Silicon Carbide Power MOSFETs

Wolfspeed  1200V Silicon Carbide Power MOSFETs set the standard for performance, ruggedness and ease of design. Wolfspeed MOSFETs feature fast switching and low switching loss capabilities, ensuring significant improvement in system efficiency, power density and overall BOM cost compared to silicon MOSFET and IGBT incumbents.

Results: 24
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Wolfspeed SiC MOSFETs SiC, MOSFET, 350m,1200V, TO-263-7, Industrial
Datasheet
1,000In Stock
Min.: 1
Mult.: 1

SMD/SMT TO-263-7 1 Channel 1.2 kV 7.2 A 455 mOhms - 8 V, + 19 V 3.6 V 13 nC - 55 C + 150 C 40.8 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 40mohm, 1200V, TO-263-7XL, Industrial
Datasheet
661In Stock
Min.: 1
Mult.: 1

SMD/SMT 1 Channel 1.2 kV 64 A 53.5 mOhms - 8 V, + 19 V 3.6 V 94 nC - 40 C + 150 C 272 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 75m, 1200V, TO-247-4, 175C capable, Industrial
Datasheet
694In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 32 A 90 mOhms - 8 V, + 19 V 3.6 V 53 nC - 40 C + 175 C 136 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 160m, 1200V, TO-263-7, Industrial
Datasheet
862In Stock
Min.: 1
Mult.: 1

SMD/SMT TO-263-7 1 Channel 1.2 kV 17 A 208 mOhms - 8 V, + 19 V 3.6 V 24 nC - 55 C + 150 C 90 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 40m, 1200V, TO-263-7XL T&R, Industrial
Datasheet
644In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 800

SMD/SMT 1 Channel 1.2 kV 64 A 53.5 mOhms - 8 V, + 19 V 3.6 V 94 nC - 40 C + 150 C 272 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 21m, 1200V, TO-247-4 LP, Industrial
Datasheet
409In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 100 A 35 mOhms - 8 V, + 19 V 3.8 V 177 nC - 40 C + 175 C 405 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 16m, 1200V, TO-247-4 LP, Industrial
Datasheet
790In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 115 A 29 mOhms - 8 V, + 19 V 3.8 V 223 nC - 40 C + 175 C 556 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 32m, 1200V, TO-263-7 XL T&R, Industrial
Datasheet
460In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 68 A 55 mOhms - 8 V, + 19 V 3.8 V 108 nC - 40 C + 175 C 341 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 32m, 1200V, TO-247-4 LP, Industrial
Datasheet
300In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 69 A 55 mOhms - 8 V, + 19 V 3.8 V 118 nC - 40 C + 175 C 278 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 40m, 1200V, TO-263-7 XL T&R, Industrial
Datasheet
314In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 64 A 70 mOhms - 8 V, + 19 V 3.8 V 91 nC - 40 C + 175 C 294 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 75m, 1200V, TO-263-7 XL T&R, Industrial
Datasheet
367In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 30 A 135 mOhms - 8 V, + 19 V 3.8 V 52 nC - 55 C + 150 C 172 W Enhancement
Wolfspeed SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET
Datasheet
430In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 1.2 kV 63 A 32 mOhms - 4 V, + 15 V 3.6 V 114 nC - 40 C + 175 C 283 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 32mohm, 1200V, TO-263-7 XL, Industrial
Datasheet
909In Stock
Min.: 1
Mult.: 1

SMD/SMT TO-263-7 1 Channel 1.2 kV 63 A 32 mOhms - 4 V, + 15 V 3.6 V 111 nC - 40 C + 175 C 277 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 40m, 1200V, TO-247-4 LP, Industrial
Datasheet
109In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 66 A 70 mOhms - 8 V, + 19 V 3.8 V 94 nC - 40 C + 175 C 242 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 75m, 1200V, TO-247-4 LP, Industrial
Datasheet
220In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 32 A 135 mOhms - 8 V, + 19 V 3.8 V 53 nC - 55 C + 150 C 145 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 160m, 1200V, TO-247-4 LP, Industrial
Datasheet
382In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4LP 1 Channel 1.2 kV 17.9 A 280 mOhms - 4 V, + 15 V 3.8 V 32 nC - 40 C + 175 C 103 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 40m, 1200V, TO-247-4, Industrial
Datasheet
391In Stock
900Expected 11/12/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 66 A 40 mOhms - 4 V, + 15 V 3.6 V 99 nC - 40 C + 175 C 326 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 160m, 1200V, TO-247-3, Industrial
Datasheet
1,079In Stock
1,800Expected 02/10/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 1.2 kV 17 A 160 mOhms - 8 V, + 19 V 3.6 V 38 nC - 55 C + 150 C 97 W Enhancement
Wolfspeed SiC MOSFETs 1.2kV 21mOHMS G3 SiC MOSFET
Datasheet
58In Stock
450Expected 12/10/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 100 A 28.8 mOhms - 8 V, + 19 V 2.5 V 162 nC - 40 C + 175 C 469 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 75m, 1200V, TO-247-3, 175C capable, Industrial
Datasheet
118In Stock
450Expected 30/10/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 1.2 kV 32 A 90 mOhms - 8 V, + 19 V 3.6 V 54 nC - 40 C + 175 C 136 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 350m,1200V, TO-247-3, Industrial
Datasheet
870Expected 31/08/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 1.2 kV 7.6 A 455 mOhms - 8 V, + 19 V 3.6 V 19 nC - 55 C + 150 C 50 W Enhancement
Wolfspeed SiC MOSFETs 1.2kV 21mOHMS G3 SiC MOSFET
Datasheet
695Expected 12/10/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 1.2 kV 100 A 28.8 mOhms - 4 V, + 15 V 1.8 V 160 nC - 40 C + 175 C 469 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 21m, 1200V, TO-263-7 XL T&R, Industrial
Datasheet
761On Order
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 1 Channel 1.2 kV 248 A 35 mOhms - 8 V, + 19 V 3.8 V 169 nC - 40 C + 175 C 500 W Enhancement
Wolfspeed SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET
Datasheet
760Expected 19/10/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 63 A 32 mOhms - 4 V, + 15 V 3.6 V 118 nC - 40 C + 175 C 283 W Enhancement