600V Single N-Channel Power MOSFETs

Taiwan Semiconductor 600V Single N-channel power MOSFETs incorporate super-junction technology and operate within the -55°C to 150°C temperature range. These MOSFETs are Pb-free, RoHS-compliant, and halogen-free. Typical applications include lighting, industrial, and switching applications.

Results: 29
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Taiwan Semiconductor MOSFETs 600V, 30A, Single N-Channel High Voltage MOSFETs, TOLL
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 4,000
Mult.: 2,000
Reel: 2,000

Si SMD/SMT TOLL-8 N-Channel 1 Channel 600 V 30 A 110 mOhms 20 V 6 V 55 nC - 55 C + 150 C 231 W Enhancement Reel
Taiwan Semiconductor MOSFETs 600V, 21A, Single N-Channel High Voltage MOSFETs
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 6,000
Mult.: 3,000
Reel: 3,000

Si SMD/SMT PDFN-4 N-Channel 1 Channel 600 V 21 A 160 mOhms 30 V 6 V 42 nC - 55 C + 150 C 173 W Enhancement Reel
Taiwan Semiconductor MOSFETs 600V, 20A, Single N-Channel High Voltage MOSFETs, PDFN88
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 6,000
Mult.: 3,000
Reel: 3,000

Si SMD/SMT PDFN88-4 N-Channel 1 Channel 600 V 20 A 180 mOhms 30 V 6 V 36 nC - 55 C + 150 C 169 W Enhancement Reel
Taiwan Semiconductor MOSFETs 600V, 16A, Single N-Channel High Voltage MOSFETs, PDFN88
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 6,000
Mult.: 3,000
Reel: 3,000

Si SMD/SMT PDFN88-4 N-Channel 1 Channel 600 V 16 A 285 mOhms 30 V 6 V 24 nC - 55 C + 150 C 164 W Enhancement Reel