EF High Voltage Power MOSFETs

Vishay / Siliconix EF High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.

Results: 31
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Vishay / Siliconix MOSFETs 650V Vds 30V Vgs TO-220 FULLPAK
Datasheet
Non-Stocked
Min.: 1,000
Mult.: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 24 A 156 mOhms - 30 V, 30 V 4 V 81 nC - 55 C + 150 C 39 W Enhancement Tube
Vishay Semiconductors MOSFETs N-CHANNEL 600V
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
Si
Vishay / Siliconix MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8
Datasheet
Non-Stocked
Min.: 3,000
Mult.: 3,000
Reel: 3,000

Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 600 V 20 A 153 mOhms - 30 V, 30 V 4 V 55 nC - 55 C + 150 C 104 W Enhancement Reel
Vishay / Siliconix MOSFETs 650V Vds 30V Vgs PowerPAK 8 x 8
Datasheet
Non-Stocked
Min.: 3,000
Mult.: 3,000
Reel: 3,000

Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 650 V 20.3 A 148 mOhms - 30 V, 30 V 4 V 66 nC - 55 C + 150 C 156 W Enhancement Reel
Vishay / Siliconix MOSFETs 650V Vds 30V Vgs TO-220AB
Datasheet
Non-Stocked
Min.: 1,000
Mult.: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 21 A 180 mOhms - 30 V, 30 V 4 V 71 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFETs 650V Vds 30V Vgs TO-220AB
Datasheet
Non-Stocked
Min.: 1,000
Mult.: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 156 mOhms - 20 V, 20 V 4 V 81 nC - 55 C + 150 C 250 W Enhancement Tube