NXH450B100H4Q2 Si/SiC Hybrid Modules

onsemi  NXH450B100H4Q2 Si/SiC Hybrid Modules contain two 1000V, 150A IGBTs, two 1200V, 30A SiC diodes, and two 1600V 30A bypass diodes, and an NTC thermistor. These Si/SiC hybrid modules feature low switching loss reduced system power dissipation, low inductive layout, press-fit and solder pin options. The NXH450B100H4Q2 hybrid modules offer -40°C to 125°C in the storage temperature range and -40°C to 125°C in the operating temperature range under switching conditions. These Si/SiC hybrid modules are ideally used in solar inverters and uninterruptible power supplies.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Packaging
onsemi NXH450B100H4Q2F2PG
onsemi IGBT Modules 1000V75A FSIII IGBT MID SPEED WITH RUGGED ANTI-PARALLEL DIODES IN PRESS FIT PINS 36In Stock
Min.: 1
Mult.: 1

SiC IGBT Modules Dual 1 kV 1.7 V 101 A 800 nA 234 W - 40 C + 150 C Tray
onsemi NXH450B100H4Q2F2SG
onsemi IGBT Modules 1000V75A FSIII IGBT MID SPEED WITH SOLDER PINS 36In Stock
Min.: 1
Mult.: 1
SiC IGBT Modules Dual 1 kV 1.7 V 101 A 800 nA 234 W - 40 C + 150 C Tray