DMT3006LFDF-7

Diodes Incorporated
621-DMT3006LFDF-7
DMT3006LFDF-7

Mfr.:

Description:
MOSFETs MOSFET BVDSS: 31V-40V

Datasheet:
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In Stock: 34,377

Stock:
34,377 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
€0.671 €0.67
€0.402 €4.02
€0.273 €27.30
€0.208 €104.00
€0.187 €187.00
Full Reel (Order in multiples of 3000)
€0.149 €447.00
€0.142 €852.00
† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DFN-2020-6
N-Channel
1 Channel
30 V
14.1 A
7 mOhms
- 20 V, 20 V
1 V
16.7 nC
- 55 C
+ 150 C
2.1 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Diodes Incorporated
Configuration: Single
Product Type: MOSFETs
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 6.750 mg
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

DMT3006LFDF-7 N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMT3006LFDF-7 MOSFET is a 30V N-Channel Enhancement-Mode MOSFET designed with a 0.6mm profile and 4mm2 footprint. Qualified to AEC-Q101 Standards for High Reliability, the DMT3006LFDF-7 MOSFET minimizes on-state resistance while maintaining excellent switching performance. The MOSFET offers a 5.8mΩ to 15mΩ on-state resistance, 1V to 3V gate threshold voltage, 12.5A to 14.1A continuous drain current, and 2.1W power dissipation. Switching performance includes a 4.6ns turn-off fall time, 5.5ns turn-on rise time, a typical 13.5ns turn-off delay time, a typical 3.5ns turn-on delay time, and 19.3 reverse recovery time. The 30V DMT3006LFDF-7 N-Channel Enhancement-Mode MOSFET design makes the device ideal for high-efficiency power-management applications.

DMTx MOSFETs

Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.

Gate Drivers

Diodes Incorporated Gate Drivers cover many applications in power systems and motor drives. These gate drivers act as the interface between the microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.

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