ZXGD3108N8TC

Diodes Incorporated
621-ZXGD3108N8TC
ZXGD3108N8TC

Mfr.:

Description:
Gate Drivers 40V Active OR-ING FET CTRL 25Vcc

Datasheet:
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Learn more about Diodes Incorporated ZXGD3108N8TC

In Stock: 2,423

Stock:
2,423 Can Dispatch Immediately
Factory Lead Time:
40 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
€2.24 €2.24
€1.45 €14.50
€1.32 €33.00
€1.12 €112.00
€1.05 €262.50
€0.92 €460.00
€0.778 €778.00
Full Reel (Order in multiples of 2500)
€0.719 €1,797.50
€0.703 €3,515.00
† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
SOIC-8
1 Driver
1 Output
3.3 A
4 V
20 V
695 ns
131 ns
- 50 C
+ 150 C
ZXGD3
Reel
Cut Tape
MouseReel
Brand: Diodes Incorporated
Maximum Turn-Off Delay Time: 400 ns
Maximum Turn-On Delay Time: 400 ns
Off Time - Max: 400 ns
Operating Supply Current: 200 uA
Output Voltage: 19.2 V
Pd - Power Dissipation: 785 mW
Product Type: Gate Drivers
Shutdown: No
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: ZXGD3108
Unit Weight: 750 mg
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Attributes selected: 0

Datasheet

PCN

TARIC:
8541210000
CNHTS:
8542399000
CAHTS:
8541210000
USHTS:
8541290065
JPHTS:
8541210101
KRHTS:
8541219000
MXHTS:
85412101
ECCN:
EAR99

ZXGD3108N8 40V Active O-Ring MOSFET Controller

Diodes Inc. ZXGD3108N8 40V Active O-Ring MOSFET Controller is designed for driving a very low RDS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier to reduce the forward voltage drop and overall increase the power transfer efficiency. It can be used on both high-side and low-side power supply units (PSU) with rails up to ±40V. It enables very low RDS(ON) MOSFETs to operate as ideal diodes as the turn-off threshold is only -3mV with ±2mV tolerance.

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