π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.

Results: 68
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Toshiba MOSFETs N-Ch MOS 8A 450V 35W 700pF 0.9 Ohm
Datasheet
199In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 8 A 900 mOhms - 30 V, 30 V 4.4 V 16 nC - 55 C + 150 C 35 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm
Datasheet
364In Stock
800Expected 19/08/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 8 A 850 mOhms - 30 V, 30 V 2 V 16 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 13A 250V 102W 1100pF 0.25
Datasheet
40Expected 17/08/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 13 A 250 mOhms 102 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 5A 600V 35W 700pF 1.43 Ohm
Datasheet
40Expected 16/10/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 5 A 1.2 Ohms - 30 V, 30 V 4.4 V 16 nC - 55 C + 150 C 35 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm
Datasheet
49On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 7.5 A 760 mOhms - 30 V, 30 V 4.4 V 16 nC - 55 C + 150 C 35 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 13A 500V 45W 1800pF 0.40
Datasheet
148Expected 17/08/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 500 V 13 A 400 mOhms 45 W MOSVII Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=30W F=1MHZ
Datasheet
1,050Expected 11/08/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 7.5 A 500 mOhms - 20 V, 20 V 1.5 V 16 nC - 55 C + 150 C 30 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm
Datasheet
250Expected 07/08/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 840 mOhms - 30 V, 30 V 2 V 25 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch 500V FET Vgss 30V 45W .45 ohm
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 500 V 11 A 600 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12A 550V 45W 1550pF 0.57
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 12 A 570 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 4.5A 450V 30W 380pF 1.75
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 4.5 A 1.75 Ohms 30 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 6A 525V 35W 600pF 1.3 Ohm
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 525 V 6 A 1.3 Ohms 35 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 6.5A 450V 35W 540pF 1.2 Ohm
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 6.5 A 1.2 Ohms 35 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 7A 550V 35W 700pF 1.25
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 7 A 1.25 Ohms 35 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 7A 500V 100W 600pF 1.22
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 7 A 1.22 Ohms 100 W MOSVII Reel
Toshiba MOSFETs N-Ch MOS 7.5A 550V 40W 800pF 1.07 Ohm
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 7.5 A 1.07 Ohms 40 W MOSVII Tube
Toshiba MOSFETs N-Ch 500V VDSS 700V 45W 1200pF 10A
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 10 A 720 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 10A 40V 25W 410pF 520 mOhms
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 500 V 11 A 520 mOhms 25 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12A 450V 45W 1200pF 0.52
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12A 450V 45W 1200pF 0.52
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 12 A 520 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12A 525V 45W 1350pF .58
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 525 V 12 A 580 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 13A 450V 45W 1350pF 0.46
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 13 A 460 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12.5A 550V 45W 1800pF 0.48
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 13.5 A 480 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 14A 550V 50W 2300pF 0.37
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 14 A 370 mOhms 50 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 16A 550V 50W 2600pF 0.33
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 16 A 330 mOhms 50 W MOSVII