CoolSiC™ 650V G2 MOSFETs

Infineon Technologies  CoolSiC™ 650V G2 MOSFETs leverage silicon carbide's performance capabilities by enabling lower energy loss, which translates into higher efficiency during power conversion.  Infineon CoolSiC 650V G2 MOSFETs provide benefits for various power semiconductor applications like photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies. A DC fast charging station for electric vehicles equipped with CoolSiC G2 allows for up to 10% less power loss than previous generations while enabling higher charging capacity without compromising form factors.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1,680Expected 18/06/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 83 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 273 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 33 mohm G2
Datasheet
6,960On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 53 A 41 mOhms - 10 V, + 25 V 5.6 V 34 nC - 55 C + 175 C 194 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
480In Stock
240Expected 18/06/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 93 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC