VSMY2850RG

Vishay Semiconductors
782-VSMY2850RG
VSMY2850RG

Mfr.:

Description:
Infrared Emitters SurflightVCSEL 850nm 100mW/sr, +/-10deg.

Datasheet:
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In Stock: 9,287

Stock:
9,287 Can Dispatch Immediately
Factory Lead Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 6000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
€0.808 €0.81
€0.565 €5.65
€0.417 €41.70
€0.35 €175.00
€0.31 €310.00
Full Reel (Order in multiples of 6000)
€0.265 €1,590.00
† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: Infrared Emitters
RoHS:  
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Moisture Sensitive: Yes
Product Type: IR Emitters (IR LEDs)
Series: VSMY2850xG
Factory Pack Quantity: 6000
Subcategory: Infrared Data Communications
Tradename: SurfLight
Unit Weight: 244.200 mg
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Datasheet

Models

Technical Resources

TARIC:
8541409090
USHTS:
8541410000
ECCN:
EAR99

VSMY2850x High-Speed IR Emitting Diodes

Vishay Semiconductors VSMY2850x High-Speed IR Emitting Diodes feature a peak wavelength of 850nm based on GaAlAs surface emitter chip technology. These diodes feature high optical power, high radiant intensities, and high speed. The VSMY2850x diodes are molded in clear and untinted plastic packages (with lens) for surface mounting. Vishay Semiconductors VSMY2850x High-Speed IR Emitting Diodes are ideal for IrDA-compatible data transmission, miniature light barriers, photo interrupters, optical switches, IR touch panels, and more.

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

VSMY High Speed IR Emitting Diodes

Vishay Semiconductors VSMY High Speed IR Emitting Diodes are infrared, 850nm-emitting diodes based on surface emitter technology with high radiant intensity, high optical power, and high speed. Vishay Semiconductors VSMY Series High-Speed IR Emitting Diodes come in four package forms, the PLCC-2, Gull Wing, Reverse Gull Wing, and 0805, all but the first of which are molded in clear, untinted plastic packages. All of these diodes are designed for surface mounting and are suitable for high pulse current operation.

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

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