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UF3C065040B3

Name: onsemi UF3C065040B3
Brand: onsemi
SKU: 431-UF3C065040B3
Price: 13.21 EUR
Availability: InStock

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Mouser No:

431-UF3C065040B3

Mfr. No:

UF3C065040B3

Mfr.:

onsemi

Description:

SiC MOSFETs 650V/40MOSICFETG3TO263

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

UF3C065040B3 Datasheet

ECAD Model:

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In Stock: 210

Stock:: 210 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€13.21	€13.21
	€9.32	€93.20
	€8.48	€848.00
	€8.03	€4,015.00
Full Reel (Order in multiples of 800)
	€7.96	€6,368.00
2,400	Quote

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	41 A
Rds On - Drain-Source Resistance:	52 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	51 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	176 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	SiC FET
Brand:	onsemi
Configuration:	Single
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Series:	UF3C
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Unit Weight:	2.414 g

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Datasheet

UF3C065040B3 Datasheet

Models

SPICE Model/UF3C065040B3 (Text)

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D²PAK-3, D²PAK-7, D²PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

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High-Performance SiC FETs

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