UF3C065030B3

onsemi
431-UF3C065030B3
UF3C065030B3

Mfr.:

Description:
SiC MOSFETs 650V/30MOSICFETG3TO263

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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In Stock: 460

Stock:
460 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€20.31 €20.31
€14.70 €147.00
Full Reel (Order in multiples of 800)
€13.73 €10,984.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
650 V
65 A
27 mOhms
- 25 V, + 25 V
4 V
51 nC
- 25 C
+ 175 C
242 W
Enhancement
AEC-Q101
SiC FET
Brand: onsemi
Configuration: Single
Fall Time: 15 ns
Packaging: Reel
Packaging: Cut Tape
Product Type: SiC MOSFETS
Rise Time: 16 ns
Series: UF3C
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 57 ns
Typical Turn-On Delay Time: 32 ns
Unit Weight: 3 g
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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

UF3C SiC FETs in D2-PAK Package

onsemi UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These onsemi SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

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