It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

TK110A65Z,S4X

Name: Toshiba TK110A65Z,S4X
Brand: Toshiba
SKU: 757-TK110A65ZS4X
Price: 5.03 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

757-TK110A65ZS4X

Mfr. No:

TK110A65Z,S4X

Mfr.:

Toshiba

Description:

MOSFETs MOSFET 650V 110mOhms DTMOS-VI

Datasheet:

TK110A65Z,S4X Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba TK110A65Z,S4X

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€5.03	€5.03
	€2.67	€26.70
	€2.41	€241.00
	€2.12	€1,060.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	24 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	45 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	28 ns
Series:	DTMOS VI
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	90 ns
Typical Turn-On Delay Time:	52 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TK110A65Z,S4X Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Data

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.