STGP6M65DF2

STMicroelectronics
511-STGP6M65DF2
STGP6M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 6 A low loss

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Availability

Stock:
Non-Stocked
Factory Lead Time:
15 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€1.55 €1.55
€0.756 €7.56
€0.67 €67.00
€0.53 €265.00
€0.479 €479.00
€0.427 €854.00
€0.404 €2,020.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
12 A
88 W
- 55 C
+ 175 C
STGP6M65DF2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 12 A
Gate-Emitter Leakage Current: +/- 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 1.800 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.