SSM3K324R,LF

Toshiba
757-SSM3K324RLF
SSM3K324R,LF

Mfr.:

Description:
MOSFETs N-Ch U-MOSVI FET ID 4A 30VDSS 200pF

Datasheet:
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Learn more about Toshiba SSM3K324R,LF

In Stock: 25,968

Stock:
25,968 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
€0.327 €0.33
€0.20 €2.00
€0.127 €12.70
€0.095 €47.50
€0.084 €84.00
Full Reel (Order in multiples of 3000)
€0.07 €210.00
€0.063 €378.00
€0.053 €477.00
€0.046 €1,104.00
† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
N-Channel
1 Channel
U-MOSVII-H
Reel
Cut Tape
MouseReel
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: SSM3K324
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 11 mg
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Discrete Solid State Drive (SSD) Solutions

Toshiba Discrete Solid State Drive (SSD) Solutions feature a broad product lineup that meets current requirements with TVS, Shottkey Barrier Diodes (SBD), LDOs, Load Switch ICs, and the powerful eFuse IC. These SSDs can parse through data quicker than a traditional Hard Disk Drive (HDD). As SSD technology improves, it will require power circuitry that meets increasingly rigorous power demands and protection that keeps essential data safe from failures. Toshiba offers a comprehensive lineup of load switches and MOSFETs for controlling power inputs, protection ICs, and diodes designed to handle abnormal input power conditions and overvoltage surges during hotplug.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.

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