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RJ1G10BBGTL1

Name: ROHM Semiconductor RJ1G10BBGTL1
Brand: ROHM Semiconductor
SKU: 755-RJ1G10BBGTL1
Price: 5.53 EUR
Availability: InStock

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Mouser No:

755-RJ1G10BBGTL1

Mfr. No:

RJ1G10BBGTL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Nch 40V 280A, TO-263AB, Power MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RJ1G10BBGTL1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RJ1G10BBGTL1

In Stock: 560

Stock:: 560 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€5.53	€5.53
	€4.23	€42.30
	€3.42	€342.00
	€3.04	€1,520.00
Full Reel (Order in multiples of 800)
	€2.61	€2,088.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-263AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	280 A
Rds On - Drain-Source Resistance:	1.43 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	210 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	192 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	340 ns
Forward Transconductance - Min:	70 S
Product Type:	MOSFETs
Rise Time:	64 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	280ns
Typical Turn-On Delay Time:	49 ns

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Datasheet

RJ1G10BBGTL1 Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

RJ1x10BBG Power MOSFETs

ROHM Semiconductor RJ1x10BBG Power MOSFETs are N-channel power MOSFETs featuring low on-resistance and a high power package. The RJ1G10BBG and RJ1L10BBG power MOSFETs have a drain-source voltage of 40V and 60V, a continuous drain current of ±280A and ±240A, respectively, and a power dissipation of 192W. The RJ1x10BBG power MOSFETs are RoHS compliant. These power MOSFETs feature lead-free plating, are halogen-free, and 100% Rg and UIS tested. The RJ1x10BBG power MOSFETs operate within the -55°C to 150°C temperature range. Typical applications include switching, motor drives, and DC/DC converters.