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NTMFS4D2N10MDT1G

Name: onsemi NTMFS4D2N10MDT1G
Brand: onsemi
SKU: 863-NTMFS4D2N10MDT1G
Price: 3.24 EUR
Availability: OutOfStock

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Mouser No:

863-NTMFS4D2N10MDT1G

Mfr. No:

NTMFS4D2N10MDT1G

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V LOW Q 4.2MOHM N-FET SO8FL

Datasheet:

NTMFS4D2N10MDT1G Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	113 A
Rds On - Drain-Source Resistance:	4.3 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	132 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTMFS4D2N10MD
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Filter Document:

Datasheet

NTMFS4D2N10MDT1G Datasheet (PDF)

PCN

Product Change Notification 2026-7-9 (PDF)

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

Shielded Gate PowerTrench® MOSFETs

onsemi Shielded Gate PowerTrench® MOSFETs are N-channel MOSFETs that minimize on-state resistance and maintain superior switching performance with best-in-class soft body diode. These MOSFET offers lower Q_rr compared to other MOSFETs. onsemi Shielded Gate PowerTrench MOSFETs lower switching noise/electromagnetic interference (EMI). These MOSFETs feature low R_DS(on) to minimize conduction losses and low Q_G and capacitance to minimize driver losses. The Shielded Gate PowerTrench MOSFETs come in a small PQFN8 package with 5mm x 6mm dimensions for compact designs. Typical applications include synchronous rectification (SR), AC-DC and DC-DC power supplies, AC-DC adapters (USB Power Delivery) SR, and load switches.

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

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NVBYST0D8N08X Single N-Channel Power MOSFET

Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

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Dual N-channel MOSFET designed with low R_g for fast switching applications.

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 53 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€3.24	€3.24
	€1.84	€18.40
	€1.58	€158.00
	€1.23	€615.00
	€1.10	€1,100.00
Full Reel (Order in multiples of 1500)
	€1.10	€1,650.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

NTMFS4D2N10MDT1G

Mfr.: onsemi

Description: MOSFETs PTNG 100V LOW Q 4.2MOHM N-FET SO8FL

Specifications

Documents (2)

Datasheet

PCN

Environmental Documents

Product & Trade Compliance

More Information

Shielded Gate PowerTrench® MOSFETs

PowerTrench Technology

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Mfr.:

onsemi

Description:

MOSFETs PTNG 100V LOW Q 4.2MOHM N-FET SO8FL

FEATURED PRODUCTS

ONSEMI