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NTMFS3D5N08XT1G

Name: onsemi NTMFS3D5N08XT1G
Brand: onsemi
SKU: 863-NTMFS3D5N08XT1G
Price: 1.66 EUR
Availability: InStock

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Mouser No:

863-NTMFS3D5N08XT1G

Mfr. No:

NTMFS3D5N08XT1G

Mfr.:

onsemi

Description:

MOSFETs T10 80V STD NCH MOSFET SO8FL

Datasheet:

NTMFS3D5N08XT1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTMFS3D5N08XT1G

In Stock: 5,687

Stock:: 5,687

Can Dispatch Immediately

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On Order:: 3,000

Expected 03/04/2026
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

€-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€1.66	€1.66
	€1.17	€11.70
	€0.815	€81.50
	€0.65	€325.00
Full Reel (Order in multiples of 1500)
	€0.569	€853.50
	€0.529	€1,587.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	135 A
Rds On - Drain-Source Resistance:	3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	23 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	119 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	97 S
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	NTMFS3D5N08X
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	23 ns

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Datasheet

NTMFS3D5N08XT1G Datasheet

PCN

Product Change Notification 2025-2-27 (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

40V Power MOSFETs

onsemi 40V Power MOSFETs feature standard gate-level technology and boast best-in-class on-resistance. The onsemi MOSFETs are designed for motor driver applications. The devices effectively minimize conduction and driving losses with lower on-resistance and reduced gate charge. Additionally, the MOSFETs provide excellent softness control for body diode reverse recovery, effectively mitigating voltage spike stress without needing an extra snubber circuit in applications.