NTH4L012N065M3S

onsemi
863-NTH4L012N065M3S
NTH4L012N065M3S

Mfr.:

Description:
SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L Auto

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
450
Expected 06/03/2026
Factory Lead Time:
53
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€17.16 €17.16
€14.11 €141.10
€12.20 €1,464.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
102 A
17 mOhms
- 10 V, 22.6 V
4 V
135 nC
- 55 C
+ 175 C
375 W
Enhancement
EliteSiC
Brand: onsemi
Configuration: Single
Fall Time: 12 ns
Packaging: Tube
Product: SiC MOSFET
Product Type: SiC MOSFETS
Rise Time: 23 ns
Series: NTH4L012N065M3S
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 49 ns
Typical Turn-On Delay Time: 5 ns
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Attributes selected: 0

650V EliteSiC (Silicon Carbide) MOSFETs

onsemi 650V EliteSiC (Silicon Carbide) MOSFETs use a technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The onsemi TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).