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NTD280N60S5Z

Name: onsemi NTD280N60S5Z
Brand: onsemi
SKU: 863-NTD280N60S5Z
Price: 2.7 EUR
Availability: InStock

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Mouser No:

863-NTD280N60S5Z

Mfr. No:

NTD280N60S5Z

Mfr.:

onsemi

Description:

MOSFETs SF5 600V EASY ZENER 280MO

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTD280N60S5Z Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTD280N60S5Z

In Stock: 2,351

Stock:: 2,351 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€2.70	€2.70
	€1.76	€17.60
	€1.22	€122.00
	€1.03	€515.00
	€0.989	€989.00
Full Reel (Order in multiples of 2500)
	€0.963	€2,407.50

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	13 A
Rds On - Drain-Source Resistance:	280 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	17.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 170 C
Pd - Power Dissipation:	89 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	4.53 ns
Product Type:	MOSFETs
Rise Time:	4.27 ns
Series:	NTD280N60S5Z
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	52 ns
Typical Turn-On Delay Time:	15.5 ns

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Datasheet

NTD280N60S5Z Datasheet

Material Composition Disclosure

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SuperFET® V MOSFETs

onsemi SuperFET^® V MOSFETs are the fifth generation high-voltage Super Junction (SJ) MOSFETs. These devices deliver best-in-class Figure of Merits (FoMs) (R_DS(ON)·Q_G and R_DS(ON)·E_OSS) to improve not only heavy load but also light load efficiency. The 600V SuperFET V MOSFETs provide design benefits through reduced conduction and switching losses while supporting extreme MOSFET dV_DS/dt ratings at 120V/ns. The SuperFET V MOSFET FAST series help to maximize system efficiency and power density. The SuperFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. Typical applications include telecommunication, cloud system, and industrial.