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IXYT85N120A4HV

Name: IXYS IXYT85N120A4HV
Brand: IXYS
SKU: 747-IXYT85N120A4HV
Price: 20.87 EUR
Availability: InStock

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Mouser No:

747-IXYT85N120A4HV

Mfr. No:

IXYT85N120A4HV

Mfr.:

IXYS

Description:

IGBTs TO268 1200V 85A XPT

Datasheet:

IXYT85N120A4HV Datasheet (PDF)

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In Stock: 475

Stock:: 475 Can Dispatch Immediately

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Factory Lead Time:: 76 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€20.87	€20.87
	€13.33	€133.30
	€12.94	€1,552.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	D3PAK-3 (TO-268-3)
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.8 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	300 A
Pd - Power Dissipation:	1.15 kW
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	Trench
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	520 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Gate-Emitter Leakage Current:	100 nA
Moisture Sensitive:	Yes
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Tradename:	XPT

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Datasheet

IXYT85N120A4HV Datasheet (PDF)

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TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

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Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low V_SAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.

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