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IXXH50N60C3D1

Name: IXYS IXXH50N60C3D1
Brand: IXYS
SKU: 747-IXXH50N60C3D1
Price: 9.6 EUR
Availability: InStock

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Mouser No:

747-IXXH50N60C3D1

Mfr. No:

IXXH50N60C3D1

Mfr.:

IXYS

Description:

IGBTs XPT IGBT C3-Class 600V/100Amp CoPacked

Datasheet:

IXXH50N60C3D1 Datasheet

ECAD Model:

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In Stock: 815

Stock:: 815 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€9.60	€9.60
	€4.97	€49.70
	€4.51	€541.20
	€4.37	€2,228.70

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247AD
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2.3 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	100 A
Pd - Power Dissipation:	600 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXXH50N60
Packaging:	Tube
Brand:	IXYS
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Tradename:	XPT
Unit Weight:	6.500 g

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Datasheet

IXXH50N60C3D1 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Discrete 600V XPT IGBTs

IXYS Discrete 600V XPT Insulated-Gate Bipolar Transistors (IGBTs) are highly rugged, low loss semiconductor devices that are easily configured in parallel. Developed using IXYS' extreme light punch through (XPT) design platform, these new devices feature excellent electrical characteristics which include low typical Vcesat, low typical current fall times, and low typical turn-off energy per pulse values.

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