+44 (0) 1494-427500

Part of the TTI Family of Specialists Contact Mouser (UK) +44 (0) 1494-427500 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IMYH200R100M1HXKSA1

Name: Infineon IMYH200R100M1HXKSA1
Brand: Infineon Technologies
SKU: 726-IMYH200R100M1HXK
Price: 13.39 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

726-IMYH200R100M1HXK

Mfr. No:

IMYH200R100M1HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package

Datasheet:

IMYH200R100M1HXKSA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IMYH200R100M1HXKSA1

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 4,353

Expected 02/07/2026
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€13.39	€13.39
	€9.88	€98.80
	€8.71	€871.00
	€8.68	€4,166.40
	€8.65	€10,380.00
2,640	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	2 kV
Id - Continuous Drain Current:	26 A
Rds On - Drain-Source Resistance:	131 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	55 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	217 W
Channel Mode:	Enhancement
Tradename:	CoolSIC
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	5 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	3 ns
Factory Pack Quantity:	240
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	2 ns
Part # Aliases:	IMYH200R100M1H SP005427376

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IMYH200R100M1HXKSA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

2000V CoolSiC™ MOSFETs

Infineon Technologies 2000V CoolSiC™ MOSFETs are trench MOSFETs in a TO-247PLUS-4-HCC package. These MOSFETs are designed to deliver increased power density without sacrificing the system's reliability, even under demanding high-voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability using the .XT interconnection technology and enable top efficiencies in various applications. The 2000V MOSFETs feature a benchmark gate threshold voltage of 4.5V and offer very-low switching losses. Typical applications include energy storage systems, EV charging, string inverter, and solar power optimizer.