IKP20N60T

Infineon Technologies
726-IKP20N60T
IKP20N60T

Mfr.:

Description:
IGBTs LOW LOSS DuoPack 600V 20A

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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In Stock: 2

Stock:
2 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€2.30 €2.30
€1.33 €13.30
€1.06 €106.00
€0.834 €417.00
€0.715 €715.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
1.5 V
- 20 V, 20 V
41 A
166 W
- 40 C
+ 175 C
TRENCHSTOP IGBT
Tube
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 500
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: SP000683066 IKP2N6TXK IKP20N60TXKSA1
Unit Weight: 6 g
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

Ultrafast 600V Trench IGBTs

Infineon Ultrafast 600V Trench IGBTs are rugged, reliable Insulated Gate Bipolar Transistors optimized for Uninterruptible Power Supplies (UPS), solar, industrial motor, and welding applications. These Ultrafast 600V Trench IGBTs utilize Trench thin wafer technology to offer lower conduction and switching losses. Infineon Ultrafast 600V Trench IGBTs are co-packaged with a soft recovery low Qrr diode. These devices are ideal for ultra-fast switching (8KHz to 30KHz) applications with 5µs short circuit rating. They feature low Vce(on) and positive Vce(on) temperature coefficient for easy paralleling.

IGBT Gate Drives with Murata DC-DC Converters

Infineon IGBTs are commonly used in high-power inverter and converter circuits that require significant isolated gate drive power to switch optimally. Murata small isolated DC/DC converters can provide that power. The same considerations apply in principle to gate drives for silicon, silicon carbide, and gallium nitride MOSFETs.

300V to 1200V IGBTs

Infineon 300-1200V IGBTs have an extensive portfolio of IGBTs that achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.

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