+44 (0) 1494-427500

Part of the TTI Family of Specialists Contact Mouser (UK) +44 (0) 1494-427500 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IGLD65R055D2AUMA1

Name: Infineon IGLD65R055D2AUMA1
Brand: Infineon Technologies
SKU: 726-IGLD65R055D2AUMA
Price: 5.82 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IGLD65R055D2AUMA

Mfr. No:

IGLD65R055D2AUMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs CoolGaN Transistor 650 V G5

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGLD65R055D2AUMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IGLD65R055D2AUMA1

In Stock: 2,525

Stock:: 2,525 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€5.82	€5.82
	€4.26	€42.60
	€3.44	€344.00
	€3.06	€1,530.00
	€2.62	€2,620.00
Full Reel (Order in multiples of 3000)
	€2.62	€7,860.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PG-LSON-8
Transistor Polarity:	HEMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	70 mOhms
Vgs - Gate-Source Voltage:	- 10 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	4.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	91 W
Channel Mode:	Enhancement
Tradename:	CoolGaN
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	14 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	GaN Transistors
Product Type:	GaN FETs
Rise Time:	8 ns
Series:	650 V G5
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	IGLD65R055D2 SP005825087

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IGLD65R055D2AUMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolGaN™ 650V G5 Transistors

Infineon Technologies CoolGaN™ 650V G5 Transistors feature highly efficient gallium nitride (GaN) transistor technology for power conversion. The 650V G5 family addresses consumer, data center, industrial, and solar application challenges. The transistors offer improved system efficiency and power density with ultra-fast switching capability. The CoolGaN technology provides discrete and integrated solutions designed to enhance overall system performance. The Infineon Technologies CoolGaN 650V G5 Transistors enable high operating frequencies and reduce EMI ratings. The transistors are ideal for power distribution, switch-mode power supplies (SMPS), telecommunications, and other industrial applications.