GCMX080A120B2H2P

SemiQ
148-GCMX080A120B2H2P
GCMX080A120B2H2P

Mfr.:

Description:
MOSFET Modules 1200V, 80mohm SiC MOSFET Full Bridge Module

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about SemiQ GCMX080A120B2H2P

Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 40   Multiples: 40
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
€27.61 €1,104.40
€24.15 €2,898.00
520 Quote

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: MOSFET Modules
RoHS:  
SiC
Press Fit
B2
N-Channel
4 Channel
1.2 kV
27 A
100 mOhms
- 5 V, + 20 V
4 V
- 40 C
+ 150 C
119 W
GCMX
Bulk
Brand: SemiQ
Fall Time: 12 ns
Height: 15 mm
Length: 62.8 mm
Product: Modules
Product Type: MOSFET Modules
Rise Time: 5 ns
Factory Pack Quantity: 40
Subcategory: Discrete and Power Modules
Type: Full Bridge Module
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 11 ns
Vf - Forward Voltage: 4.2 V
Width: 33.8 mm
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Attributes selected: 0

Datasheet

USHTS:
8541100080
ECCN:
EAR99

GCMX 1200V SiC MOSFET Full-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.

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