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GCMS080B120S1-E1

Name: SemiQ GCMS080B120S1-E1
Brand: SemiQ
SKU: 148-GCMS080B120S1-E1
Price: 19.19 EUR
Availability: InStock

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Mouser No:

148-GCMS080B120S1-E1

Mfr. No:

GCMS080B120S1-E1

Mfr.:

SemiQ

Description:

Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227

Datasheet:

GCMS080B120S1-E1 Datasheet (PDF)

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Learn more about SemiQ GCMS080B120S1-E1

In Stock: 599

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€19.19	€19.19
	€13.92	€139.20
	€13.52	€1,352.00
	€11.71	€11,710.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	Discrete Semiconductor Modules
RoHS:
REACH - SVHC:
Product:	MOSFET-SiC SBD Modules
Type:	COPACK Power Module
Technology:	SiC
Vf - Forward Voltage:	1.5 V
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	SemiQ
Configuration:	Single
Fall Time:	14 ns
Id - Continuous Drain Current:	30 A
Pd - Power Dissipation:	142 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	77 mOhms
Rise Time:	4 ns
Factory Pack Quantity:	10
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	2 V

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Datasheet

GCMS080B120S1-E1 Datasheet (PDF)

TARIC:: 8541100000
CNHTS:: 8541290000
CAHTS:: 8541100090
USHTS:: 8541100080
ECCN:: EAR99

SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.