FS520R12A8P1LBHPSA1

Infineon Technologies
726-FS520R12A8P1LBHP
FS520R12A8P1LBHPSA1

Mfr.:

Description:
IGBT Modules HYBRID PACK DRIVE G2 SI

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 1

Stock:
1
Can Dispatch Immediately
On Order:
12
Expected 13/02/2026
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
€428.20 €428.20
€398.23 €4,778.76

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBT Modules
RoHS:  
IGBT Modules
Hex
1.2 kV
1.48 V
520 A
400 nA
1 kW
- 40 C
+ 175 C
Tray
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Press Fit
Product Type: IGBT Modules
Series: Drive G2
Factory Pack Quantity: 6
Subcategory: Discrete and Power Modules
Technology: Si
Tradename: HybridPACK
Part # Aliases: FS520R12A8P1LB SP005850366
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TARIC:
8541290000
CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

HybridPACK™ Drive G2 Modules

Infineon Technologies HybridPACK™ Drive G2 Modules are compact power modules designed for hybrid and electric vehicle traction. The Infineon Technologies G2 modules offer scalable performance levels using Si or SiC technologies and different chipsets, maintaining the same module size. Introduced in 2017 with silicon EDT2 technology, it was optimized for efficiency in real-world driving. In 2021, a CoolSiC™ version was introduced, offering higher cell density and better performance. In 2023, the second generation, HybridPACK Drive G2, was launched with EDT3 (Si IGBT) and CoolSiC™ G2 MOSFET technologies, providing ease of use and integration options for sensors, enabling up to 300kW performance within 750V and 1200V classes.