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DMN2990UFZ-7B

Name: Diodes Incorporated DMN2990UFZ-7B
Brand: Diodes Incorporated
SKU: 621-DMN2990UFZ-7B
Price: 0.41 EUR
Availability: InStock

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Mouser No:

621-DMN2990UFZ-7B

Mfr. No:

DMN2990UFZ-7B

Mfr.:

Diodes Incorporated

Description:

MOSFETs 20V N-Ch Enh FET Dual .25A .32W 389pF

Datasheet:

DMN2990UFZ-7B Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMN2990UFZ-7B

In Stock: 12,256

Stock:: 12,256 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

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Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€0.413	€0.41
	€0.252	€2.52
	€0.16	€16.00
	€0.12	€60.00
	€0.096	€96.00
	€0.084	€420.00
Full Reel (Order in multiples of 10000)
	€0.079	€790.00
	€0.073	€1,460.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	X2-DFN0606-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	250 mA
Rds On - Drain-Source Resistance:	990 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	320 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	7.7 ns
Forward Transconductance - Min:	180 mS
Product Type:	MOSFETs
Rise Time:	2.1 ns
Series:	DMN2990
Factory Pack Quantity:	10000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	3.5 ns
Unit Weight:	1 mg

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Datasheet

DMN2990UFZ-7B Datasheet (PDF)

PCN

Product Change Notification (PDF)

Environmental Compliance (PDF)

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
MXHTS:: 8541210100
ECCN:: EAR99

DMxx Miniature Enhancement Mode MOSFETs

Diode Inc. DMxx Miniature Enhancement Mode MOSFETs are designed to minimize on-state resistance (R_DS(ON)). They maintain superior switching performance, making them ideal for high-efficiency power management applications. The DMN31D5UFZ and DMN2990UFZ are N-Channel enhancement mode MOSFETs and the DMP32D9UFZ is a P-Channel Enhancement Mode MOSFET.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.