It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

BSH205G2AR

Name: Nexperia BSH205G2AR
Brand: Nexperia
SKU: 771-BSH205G2AR
Price: 0.42 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

771-BSH205G2AR

Mfr. No:

BSH205G2AR

Mfr.:

Nexperia

Description:

MOSFETs SOT23 P-CH 20V 2.6A

Datasheet:

BSH205G2AR Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Nexperia BSH205G2AR

In Stock: 2,351

Stock:: 2,351 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€0.421	€0.42
	€0.296	€2.96
	€0.187	€9.35
	€0.168	€16.80
	€0.117	€117.00
Full Reel (Order in multiples of 3000)
	€0.09	€270.00
	€0.081	€486.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	2.6 A
Rds On - Drain-Source Resistance:	118 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	4.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	1.3 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	5 S
Product Type:	MOSFETs
Rise Time:	13 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-channel Trench MOSFET
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	5 ns
Part # Aliases:	934661354215
Unit Weight:	8 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

BSH205G2AR Datasheet (PDF)

Application Notes

Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)

PCN

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Small Signal Automotive MOSFETs

Nexperia Small-Signal Automotive MOSFETs offer performance reliability with full AEC-Q101 compliance. Nexperia offers a broad portfolio of Small-Signal MOSFETs, with drain-source on-state resistance as low as 15mΩ, up to 6A maximum drain current, and drain-source voltage options from 20V to 100V. These Nexperia devices are offered in various package types for design flexibility, with leaded and leadless DFN options.

BSH205G2 20V P-Channel Trench MOSFET

Nexperia BSH205G2 20V P-Channel Trench MOSFET is an enhancement mode field-effect transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The device employs Trench MOSFET technology and offers a low threshold voltage with very fast switching. The BSH205G2 MOSFET is ideal for applications like relay drivers, high-speed line drivers and switching circuits.