APS6404L-SQH-SN

AP Memory
878-APS6404L-SQH-SN
APS6404L-SQH-SN

Mfr.:

Description:
DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 144MHz, HS, 1.8V, Ind. Temp., SOP8

ECAD Model:
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In Stock: 2,749

Stock:
2,749 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
€1.39 €1.39
€1.27 €12.70
€1.23 €30.75
€1.20 €60.00
€1.18 €118.00
€1.14 €285.00
€1.12 €560.00
€1.10 €1,100.00
Full Reel (Order in multiples of 3000)
€1.06 €3,180.00
† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
AP Memory Technology
Product Category: DRAM
RoHS:  
PSRAM (Pseudo SRAM)
64 Mbit
4 bit / 1 bit
144 MHz
SOP-8
8 M x 8
1.62 V
1.98 V
- 40 C
+ 85 C
IoT RAM
Reel
Cut Tape
MouseReel
Brand: AP Memory
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 3000
Subcategory: Memory & Data Storage
Tradename: APMemory
Unit Weight: 76 mg
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Attributes selected: 0

CNHTS:
8542329010
USHTS:
8542320041
ECCN:
3A991.b.2.a

Quad SPI (QSPI) PSRAM SDRs in USON8 Package

AP Memory Quad SPI (QSPI) PSRAM SDRs in a USON8 Package delivers Internet of Things (IoT) RAM ranging from 16M to 64M densities with 2M x8 or 8M x8 organization. The PSRAM SDRs are offered in the USON8 package resulting in a compact solution compared to SOP8 but keeping the simplicity of PCB. The Quad SPI Pseudo Static Random Access Memory (PSRAM) SDRs feature a maximum clock frequency from 84MHz to 144MHz, depending on the device. Additionally, the devices support operating supply voltages in 1.8V and 3V versions, with an -40°C to 85°C industrial grade temperature range. AP Memory Quad SPI PSRAM SDRs in a USON8 package are ideal in memory selection for SoC applications requiring low pin count and ultra-low power extended memory.