AFGH4L25T120RWD

onsemi
863-AFGH4L25T120RWD
AFGH4L25T120RWD

Mfr.:

Description:
IGBTs FS7 1200V 25A SCR IGBT TO247 4L

Lifecycle:
New At Mouser
Datasheet:
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Learn more about onsemi AFGH4L25T120RWD

In Stock: 445

Stock:
445 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€8.13 €8.13
€5.58 €55.80
€4.20 €504.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
RoHS:  
Si
TO-247-4
Through Hole
Single
1.2 kV
1.37 V
20 V
50 A
416 W
- 55 C
+ 175 C
AFGH4L25T120RWD
Tube
Brand: onsemi
Continuous Collector Current Ic Max: 25 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBTs
Factory Pack Quantity: 30
Subcategory: Transistors
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

AFGHxL25T Single N-Channel 1200V 25A IGBTs

onsemi AFGHxL25T Single N-Channel 1200V 25A Insulated Gate Bipolar Transistors (IGBTs) feature a robust and cost-effective Field Stop VII Trench construction. The onsemi AFGHxL25T provides superior performance in demanding switching applications. Low on-state voltage and minimal switching loss offer optimum hard and soft switching topology performance in automotive applications.

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