Asahi Kasei Microdevices HQ-0A11 InAs Quantum Well Hall Element
Asahi Kasei Microdevices HQ-0A11 InAs Quantum Well Hall Element is designed to output an electric signal according to the strength of the magnetic field created by the magnet. This hall element includes 0.66mV/mA/mT sensitivity, 6V maximum input voltage, 8.5mA maximum input current, and 600Ω minimum input resistance. The HQ-0A11 InAs quantum hall element features a 16% better Signal-to-Noise (S/N) ratio directly correlated to position detection accuracy. This device operates at a temperature range of -40°C to 125°C and offers a small and thin package size of 0.8mm x 0.4mm x 0.23mm. Typical applications include paper thickness detection, smartphone cameras, detection with joysticks, magnetic encoder, wheel rotation speed detection, and lens modules.Features
- High S/N performance with 16% better S/N (Signal-to-Noise) ratio
- 0.66mV/mA/mT sensitivity
- 6V maximum input voltage
- 600Ω minimum input resistance
- 600Ω minimum output resistance
- 8.5mA maximum input current
- -40°C to 125°C operating temperature range
- 0.8mm x 0.4mm x 0.23mm size
- Pb free
- Halogen-free
- Moisture Sensitivity Level 1 (MSL)
Applications
- Paper thickness detection
- Detection of opening and closing of mobile phones and personal computers
- Lens modules
- Detection with joysticks
- Magnetic encoder
- Current measurement with an overhead wire ammeter (clamp type ammeter)
- Position detection with brushless motor
- Wheel rotation speed detection
Size Comparison
Input Voltage Derating Curve
Dimension Diagram
Published: 2025-01-13
| Updated: 2025-01-27
