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TK31V60W5,LVQ

Name: Toshiba TK31V60W5,LVQ
Brand: Toshiba
SKU: 757-TK31V60W5LVQ
Price: 5.01 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TK31V60W5LVQ

Mfr. No:

TK31V60W5,LVQ

Mfr.:

Toshiba

Description:

MOSFETs N-Ch DTMOSIV 600V 240W 3000pF 30.8A

Datasheet:

TK31V60W5,LVQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TK31V60W5,LVQ

In Stock: 1,587

Stock:: 1,587

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On Order:: 2,250

Expected 10/02/2026
Factory Lead Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€5.01	€5.01
	€3.36	€33.60
	€2.55	€255.00
	€2.54	€1,270.00
	€2.51	€2,510.00
Full Reel (Order in multiples of 2500)
	€2.15	€5,375.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN8x8-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	30.8 A
Rds On - Drain-Source Resistance:	87 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	105 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	240 W
Channel Mode:	Enhancement
Tradename:	DTMOSIV
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	8.5 ns
Product Type:	MOSFETs
Rise Time:	80 ns
Series:	TK31V60
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	165 ns
Typical Turn-On Delay Time:	120 ns
Unit Weight:	175 mg

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Datasheet

TK31V60W5,LVQ Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.