TK2A65D(STA4,Q,M)

Toshiba
757-TK2A65DSTA4QM
TK2A65D(STA4,Q,M)

Mfr.:

Description:
MOSFETs N-Ch MOS 2A 650V 30W 380pF 3.26

ECAD Model:
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In Stock: 262

Stock:
262 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€1.36 €1.36
€0.798 €7.98
€0.759 €75.90
€0.562 €281.00
€0.479 €479.00
€0.475 €1,187.50
€0.465 €2,325.00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
2 A
3.26 Ohms
- 30 V, 30 V
2.4 V
9 nC
- 55 C
+ 150 C
30 W
Enhancement
MOSVII
Tube
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: TK2A65D
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 2 g
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Attributes selected: 0

TARIC:
8542399000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
MXHTS:
8542399901
ECCN:
EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.