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TK11A45D(STA4,Q,M)

Name: Toshiba TK11A45D(STA4,Q,M)
Brand: Toshiba
SKU: 757-TK11A45DSTA4QM
Price: 2.15 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TK11A45DSTA4QM

Mfr. No:

TK11A45D(STA4,Q,M)

Mfr.:

Toshiba

Description:

MOSFETs N-Ch MOS 10A 40V 25W 410pF 0.029

Datasheet:

TK11A45D(STA4,Q,M) Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK11A45D(STA4,Q,M)

In Stock: 103

Stock:: 103 Can Dispatch Immediately

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Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€2.15	€2.15
	€1.02	€10.20
	€1.01	€101.00
	€0.737	€368.50
	€0.67	€670.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	450 V
Id - Continuous Drain Current:	11 A
Rds On - Drain-Source Resistance:	500 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Tradename:	MOSVII
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	0.8 S
Product Type:	MOSFETs
Rise Time:	25 ns
Series:	TK11A45D
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	75 ns
Typical Turn-On Delay Time:	60 ns
Unit Weight:	2 g

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Datasheet

TK11A45D(STA4,Q,M) Datasheet (PDF)

Application Notes

Product Catalogs

TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 8542399901
ECCN:: EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and R_DS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.