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CSD25310Q2T

Name: Texas Instruments CSD25310Q2T
Brand: Texas Instruments
SKU: 595-CSD25310Q2T
Price: 1.51 EUR
Availability: InStock

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Mouser No:

595-CSD25310Q2T

Mfr. No:

CSD25310Q2T

Mfr.:

Texas Instruments

Description:

MOSFETs -20-V P channel Nex FET power MOSFET si A 595-CSD25310Q2

Datasheet:

CSD25310Q2T Datasheet

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More Information

Learn more about Texas Instruments CSD25310Q2T

In Stock: 17,112

Stock:: 17,112 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€1.51	€1.51
	€0.929	€9.29
	€0.541	€54.10
Full Reel (Order in multiples of 250)
	€0.541	€135.25
	€0.464	€232.00
	€0.418	€418.00
	€0.413	€1,032.50

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD25310Q2

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

€0.52

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD25310Q2

Description:

MOSFETs 20-V P-CH NexFET Pwr MOSFET

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WSON-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	19.9 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	4.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.9 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	5 ns
Forward Transconductance - Min:	34 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	CSD25310Q2
Factory Pack Quantity:	250
Subcategory:	Transistors
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	8 ns
Unit Weight:	6 mg

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Datasheet

CSD25310Q2T Datasheet

PCN

SPICE Models

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

CSD25310Q2 20V P-Channel NexFET Power MOSFET

Texas Instruments CSD25310Q2 20V P-Channel NexFET Power MOSFET is a 19.9mΩ, –20V P-Channel MOSFET that is designed to deliver the lowest on-resistance and gate charge. This is done in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The CSD25310Q2's low on-resistance coupled with an extremely small footprint in a SON 2mm×2mm plastic package makes the device ideal for battery-operated space-constrained operations.