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CSD18504KCS

Name: Texas Instruments CSD18504KCS
Brand: Texas Instruments
SKU: 595-CSD18504KCS
Price: 1.84 EUR
Availability: InStock

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Mouser No:

595-CSD18504KCS

Mfr. No:

CSD18504KCS

Mfr.:

Texas Instruments

Description:

MOSFETs 40V N-Ch NexFET Pwr MOSFET

Datasheet:

CSD18504KCS Datasheet

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In Stock: 747

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Qty.	Unit Price	Ext. Price
	€1.84	€1.84
	€1.18	€11.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Qg - Gate Charge:	19 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	93 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Tube
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	4.2 ns
Forward Transconductance - Min:	72 S
Product Type:	MOSFETs
Rise Time:	5.2 ns
Series:	CSD18504KCS
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	11.2 ns
Typical Turn-On Delay Time:	4.4 ns
Unit Weight:	2 g

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Datasheet

CSD18504KCS Datasheet

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TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 8542399901
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.