It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD16301Q2

Name: Texas Instruments CSD16301Q2
Brand: Texas Instruments
SKU: 595-CSD16301Q2
Price: 0.64 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

595-CSD16301Q2

Mfr. No:

CSD16301Q2

Mfr.:

Texas Instruments

Description:

MOSFETs N-Channel NexFET Pow er MOSFET

Datasheet:

CSD16301Q2 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Texas Instruments CSD16301Q2

In Stock: 16,992

Stock:: 16,992

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 21,000

Expected 09/03/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€0.645	€0.65
	€0.396	€3.96
	€0.257	€25.70
	€0.196	€98.00
	€0.175	€175.00
Full Reel (Order in multiples of 3000)
	€0.148	€444.00
	€0.138	€828.00
	€0.12	€1,080.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WSON-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	5 A
Rds On - Drain-Source Resistance:	24 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	15 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	1.7 ns
Product Type:	MOSFETs
Rise Time:	4.4 ns
Series:	CSD16301Q2
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	4.1 ns
Typical Turn-On Delay Time:	2.7 ns
Unit Weight:	8.700 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

PCN

Product Catalogs

Power Management Guide 2018 (Rev. R)

SPICE Models

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.

NexFET™ Power MOSFET: CSD16301Q2

The Texas Instruments CSD16301Q2 N-Channel NexFET™ Power MOSFET minimizes losses in power conversion and load management applications. The TI CSD16301Q2 NexFET MOSFET comes in a SON 2-mm x 2-mm plastic package that offers excellemt thermal performance for its size. The TI CSD16301Q2 provides ultralow Qg and Qgd and is ideal for DC-DC converters and battery and load management applications.