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S34ML08G201BHI000

Name: SkyHigh Memory S34ML08G201BHI000
Brand: SkyHigh Memory
SKU: 727-S34ML08G201BHI00
Price: 10.32 EUR
Availability: InStock

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Mouser No:

727-S34ML08G201BHI00

Mfr. No:

S34ML08G201BHI000

Mfr.:

SkyHigh Memory

Description:

NAND Flash SLC,8Gb,3x,3V,x8,4bit,VLD63,

Datasheet:

S34ML08G201BHI000 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about SkyHigh Memory S34ML08G201BHI000

In Stock: 5,851

Stock:: 5,851 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€10.32	€10.32
	€9.61	€96.10

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SkyHigh Memory
Product Category:	NAND Flash
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	BGA-63
Memory Size:	8 Gbit
Interface Type:	Parallel
Organisation:	1 G x 8
Timing Type:	Asynchronous
Data Bus Width:	8 bit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Supply Current - Max:	35 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tray
Active Read Current - Max:	30 mA
Brand:	SkyHigh Memory
Moisture Sensitive:	Yes
Product Type:	NAND Flash
Factory Pack Quantity:	210
Subcategory:	Memory & Data Storage
Unit Weight:	5 g

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Datasheet

S34ML08G201BHI000 Datasheet (PDF)

PCN

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TARIC:: 8542326900
CNHTS:: 8542329000
CAHTS:: 8542320040
USHTS:: 8542320051
JPHTS:: 854232039
KRHTS:: 8542321090
MXHTS:: 8542320299
ECCN:: 3A991.b.1.a

S34ML0xGx SLC NAND Flash Memory

SkyHigh Memory S34ML0xGx SLC NAND Flash Memory is the first family of Single-Level Cell (SLC) NAND products using 4x nm floating-gate technology, targeted specifically for data storage in automotive, consumer, and networking applications. The SLC NAND is offered in densities from 1Gb to 8Gb, in 3.0V and 1.8V families that feature high performance, extended temperature range, long-term product support, and stringent reliability demands, such as 1-bit, 4-bit Error Correction Code (ECC). The NAND cell provides the most cost-effective solution for the solid-state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.