MASTERGAN6TR

STMicroelectronics
511-MASTERGAN6TR
MASTERGAN6TR

Mfr.:

Description:
Gate Drivers 650 V enhancement mode GaN High power density half-bridge with high voltage driver
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
500
Expected 09/04/2026
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1   Maximum: 25
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
€8.70 €8.70
€6.73 €67.30
€6.42 €160.50
Full Reel (Order in multiples of 3000)
€6.42 €19,260.00
† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Gate Driver
Half-Bridge
SMD/SMT
QFN-35
1 Output
9 V
18 V
4 ns
4 ns
- 40 C
+ 125 C
MASTERGAN6
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: SG
Development Kit: EVLMG6
Maximum Turn-Off Delay Time: 70 ns
Maximum Turn-On Delay Time: 70 ns
Off Time - Max: 70 ns
Pd - Power Dissipation: 20 mW
Product Type: Gate Drivers
Propagation Delay - Max: 105 ns
Rds On - Drain-Source Resistance: 140 mOhms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 194 mg
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Attributes selected: 0

Datasheet

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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