RGEX5TS65DGC13

ROHM Semiconductor
755-RGEX5TS65DGC13
RGEX5TS65DGC13

Mfr.:

Description:
IGBTs 5 s Short-Circuit Tolerance, 650V 75A, FRD Built-in, TO-247GE, Field Stop Trench IGBT

Lifecycle:
NRND:
Not recommended for new designs.
ECAD Model:
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In Stock: 600

Stock:
600 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 600 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€8.23 €8.23
€4.88 €48.80
€4.31 €431.00

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
Si
TO-247GE-3
Through Hole
Single
650 V
1.65 V
30 V
102 A
306 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Continuous Collector Current Ic Max: 75 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBTs
Factory Pack Quantity: 600
Subcategory: Transistors
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

RGE Field Stop Trench IGBTs

ROHM Semiconductor RGE Field Stop Trench IGBTs feature low collector-emitter saturation voltage, low switching loss, and a short circuit withstand time of 5μs. The  ROHM Semiconductor RGE IGBTs ensure reliable operation under high-stress conditions. The built-in fast and soft recovery FRD enhances efficiency, while Pb-free lead plating ensures RoHS compliance. Perfect for general inverters, Uninterruptible Power Supply (UPS) systems, power conditioners, and welders, the RGE series provides a robust solution for modern power management needs.