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QPD1028L

Name: Qorvo QPD1028L
Brand: Qorvo
SKU: 772-QPD1028L
Price: 1611.84 EUR
Availability: InStock

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Mouser No:

772-QPD1028L

Mfr. No:

QPD1028L

Mfr.:

Qorvo

Description:

GaN FETs 750W, 65V, Pre-matched, 1.2-1.4GHz, Flan

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In Stock: 10

Stock:: 10 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 10 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€1,611.84	€1,611.84
18	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	NI-780
Vds - Drain-Source Breakdown Voltage:	65 V
Id - Continuous Drain Current:	19 A
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	400 W
Brand:	Qorvo
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Gain:	19.8 dB
Moisture Sensitive:	Yes
Output Power:	750 W
Packaging:	Waffle
Product Type:	GaN FETs
Series:	QPD1028L
Factory Pack Quantity:	18
Subcategory:	Transistors
Technology:	GaN SiC
Transistor Type:	HEMT

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USHTS:: 8542330001
ECCN:: EAR99

QPD1028 & QPD1028L 750W GaN on SiC Transistors

Qorvo QPD1028 and QPD1028L 750W GaN on SiC Transistors are discrete Gallium Nitride on Silicon Carbide HEMT (High-Electron-Mobility Transistors) operating from 1.2GHz to 1.4GHz. These devices provide 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. The QPD1028 and QPD1028L Transistors are internally pre-matched for optimal performance can support both continuous wave and pulsed operations.