MSCSM120DDUM16CTBL3NG

Microchip Technology
579-120DDUM16CTBL3NG
MSCSM120DDUM16CTBL3NG

Mfr.:

Description:
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL3

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In Stock: 3

Stock:
3 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
€391.46 €391.46

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: Discrete Semiconductor Modules
RoHS:  
MOSFET-SiC SBD Modules
MOSFET / SiC SBD
SiC
1.5 V
1.2 kV
- 10 V, + 25 V
Screw Mount
- 55 C
+ 175 C
Brand: Microchip Technology
Configuration: Double Dual Common Source
Fall Time: 25 ns
Id - Continuous Drain Current: 150 A
Pd - Power Dissipation: 560 W
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 16 mOhms
Rise Time: 30 ns
Factory Pack Quantity: 1
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 30 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
MXHTS:
8541299900
ECCN:
EAR99

MSCSM120x MOSFET Power Modules

Microchip Technology MSCSM120x MOSFET Power Modules are high-efficiency converters that feature Si3N4 substrate with thick copper for improved thermal performance. These modules offer a low profile, direct mounting to the heatsink (isolated package), an internal thermistor for temperature monitoring, and an extended temperature range. The MSCSM120x modules operate at 1.2kV reverse voltage (VR), -10V to 25V gate-source voltage range (VGS), 310W/560W power dissipation (PD), and 79A/150A continuous drain current (ID). These modules are used in applications such as high-reliability power systems, high-efficiency AC/DC and DC/AC converters, motor control, and AC switches.