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AIMDQ75R050M2HXTMA1

Name: Infineon AIMDQ75R050M2HXTMA1
Brand: Infineon Technologies
SKU: 726-AIMDQ75R050M2HXT
Price: 6.84 EUR
Availability: InStock

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Mouser No:

726-AIMDQ75R050M2HXT

Mfr. No:

AIMDQ75R050M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

AIMDQ75R050M2HXTMA1 Datasheet (PDF)

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Learn more about Infineon Technologies AIMDQ75R050M2HXTMA1

In Stock: 70

Stock:: 70 Can Dispatch Immediately

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Factory Lead Time:: 53 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€6.84	€6.84
	€4.98	€49.80
	€4.15	€415.00
	€3.64	€1,820.00
Full Reel (Order in multiples of 750)
	€3.28	€2,460.00
	€3.27	€7,357.50
9,750	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PG-HDSOP-22
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	- 7 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	24 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	148 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	11 S
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFET
Product Type:	SiC MOSFETS
Rise Time:	6 ns
Series:	CoolSiC G2
Factory Pack Quantity:	750
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	Automotive MOSFET
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	AIMDQ75R050M2H SP006089210

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Datasheet

AIMDQ75R050M2HXTMA1 Datasheet (PDF)

ECCN:: EAR99

CoolSiC™ Automotive 750V G2 MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of R_DS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.